General Description：HGQ024N04A, the silicon N-channel EnhancedVDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. This device issuitable for use as a load switch and PWM applications. Thepackage form is PDFN5*6, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤2.4mΩ)
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger. E-cigarette,Electric Tool
