Bussmann电感熔断器_力特库柏西安熔断器

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HGQ024N04A

  • 分类:MOSFET
  • 简介:HGQ024N04A 40V 134A 1.6 mΩ
  • 交货周期:现货 30K
  • 发布时间:2021-08-05 15:01:14
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General Description HGQ024N04A, the silicon N-channel EnhancedVDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. This device issuitable for use as a load switch and PWM applications. Thepackage form is PDFN5*6, which accords with the RoHS standard.

Features

l Fast Switching 

l Low ON Resistance(Rdson≤2.4mΩ

l Low Gate Charge

l Low Reverse transfer capacitances 

l 100% Single Pulse avalanche energy Test

Applications: 

Power switch circuit of adaptor and charger. E-cigarette,Electric Tool

AbsoluteTj= 25unless otherwise specified



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